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IRF1407 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power Supply Unit replacement chip

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IRF1407 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power Supply Unit replacement chip

Name: IRF1407 75V Single NChannel HEXFET Power MOSFET in a TO220AB package Power Supply Unit replacement chip
Brand: Original
Price: 1 USD

Quality IRF1407 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power Supply Unit replacement chip for sale

Model Number : IRF1407

Place of Origin : Guangdong, China

Brand Name : Original

Packaging Details : Standard carton

MOQ : 1

Price : Negotiable

Type : MOSFET

Package Type : Throught Hole

Application : Power Supply

Operating Temperature : -45 to +125

Package / Case : TO-220AB

FET Type : N channel

Drain to Source Voltage (Vdss) : 75V

Current - Continuous Drain (Id) @ 25°C : 130.0 A

Rds On (Max) @ Id, Vgs : 7.8 mOhms

Vgs(th) (Max) @ Id : 3.0 V 2.0 V 4.0 V

Gate Charge (Qg) (Max) @ Vgs : 160.0 nC

Stock : In Stock

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IRF1407 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

Features:

Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard through-hole power package
High-current carrying capability package (up to 195 A, die-size dependent)
Capable of being wave-soldered

Parametrics	IRF1407
ID (@25°C) max	130.0 A
Mounting	THT
Ptot max	330.0 W
Package	TO-220
Polarity	N
QG (typ @10V)	160.0 nC
Qgd	54.0 nC
RDS (on) (@10V) max	7.8 mOhms
RthJC max	0.45 K/W
Tj max	175.0 °C
VDS max	75.0 V
VGS(th) min max	3.0 V 2.0 V 4.0 V
VGS max	20.0 V

IRF1407 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power Supply Unit replacement chip Images

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